发明名称 REFORMING METHOD FOR HIGH-PURITY SELENIUM
摘要 PURPOSE:To improve conductivity while maintaining the transparency of a protective layer consisting of a binder resin having a substantially insulating characteristic by dispersing conductive or semi-conductive powder having <=0.3mu average grain size into said protective layer. CONSTITUTION:The protective layer of an electrophotographic sensitive body formed by successively laminating a photoconductive layer and the protective layer on a conductive base is formed by dispersing the powder essentially consisting of the group IVa element and having <=0.3mu average grain size into the binder resin. Vapor deposited films of Se, Se-Te alloy Se-As alloy, etc., org. photoconductor layers of PVK/TNF, etc., amorphous Si photosensitive layer, layers formed by dispersing inorg. photoconductors such as ZnO and CdS into the binder, etc., are usable as the photoconductive layer. The layer formed by laminating an electric charge generating layer and charge transfer layer is also usable. The group IVa element is exemplified by Si, C, and Ge.
申请公布号 JPS62280753(A) 申请公布日期 1987.12.05
申请号 JP19860123261 申请日期 1986.05.30
申请人 FUJI XEROX CO LTD 发明人 OMI KAZUAKI;HATTORI MASAO
分类号 G03G5/14;G03G5/147 主分类号 G03G5/14
代理机构 代理人
主权项
地址