| 摘要 |
PURPOSE:To obtain the titled agent having an excellent residual film thickness ratio of the photosensitive agent in a positive resist usable for radiation of an ionizing radiation under a high vacuum by incorporating a series of the photosensitive agent composed of 1-oxo-2-diazo naphthoquinone 4-allylsulfonate to the titled agent. CONSTITUTION:The diazo-orthonaphthoquinone which is used for the positive resist as the photosensitive agent does not change to 3-indene carboxylic acid derivative by the radiation of the ionizing radiation under the high vacuum, and reacts with an alkaline soluble matrix resin, resulted in forming a caboxylic acid ester. The difference of solubility against an aqueous alkaline solution in a developing process depends on the difference of the solubility of the carboxylic acid ester which is formed by an unchanged photosensitive agent in the matrix resin. Thus, the stopping powers of dissolution necessary for forming a pattern at the time of exposing light in the air and exposing by the radiation of the ionizing radiation such as electron ray, X-ray and ion-beam, etc., respectively are entirely different from each other. The 1-oxo-2- diazo-naphthoquinone-4-allysulfonate which is the 4 position substituted derivative of the diazo ortho naphthoquinone has the excellent sensitivity and residual film thickness ratio, after developing. |
