| 摘要 |
PURPOSE:To obtain a superior voltage reducing characteristic even in case of using an NPN-type transistor as an output transistor, by operating the output transistor by setting the base potential of the output transistor higher than the collector potential of the transistor. CONSTITUTION:Temperature compensation for a pressure rise voltage V STB is performed by a series circuit consisting of Zener diodes Z1 and Z2, resistance R6 and R7, and diodes 5 and 6. The pressure rise voltage V STB is voltage- divided at a connecting point (c) by the resistances R6 and R7, and is impressed on the base of an output transistor Q9. The output transistor Q9 is the one of NPN-type, and the collector is connected to a power source voltage V CC line, and the emitter forms the output terminal of a stabilized voltage V out. In other words, since a potential Vc at the connecting point (c) is stabilized assuming that the pressure rise voltage V STB is stabilized, it is resulted that a regulated base voltage is always impressed on the output transistor Q9.
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