发明名称 METHOD FOR HEAT TREATMENT OF WAFER
摘要 PURPOSE:To enable the efficient and uniform heat treatment by inserting a wafer into a heat treatment furnace under the condition that an oxygen gas is included in a tube containing the wafers. CONSTITUTION:By introducing an oxygen gas from gas inlets 2 and 5, the atmosphere inside a heat treatment furnace 1 and that inside a conveying tube 6 are made as an oxygen gas atmosphere respectively. Wafers 4 are inserted into the furnace together with the tube 6. As a result, when a heat treatment starts, the atmosphere inside the tube 6 and that inside the furnace 1 have been made an oxygen gas atmosphere respectiveiy and step of removing impurities due to an oxygen gas is unnecessary, thereby contriving the improvement in productivity. Thus, the efficient and uniform heat treatment can be effected without leaving an inert gas such as nitrogen gas among the wafers 4.
申请公布号 JPS62279642(A) 申请公布日期 1987.12.04
申请号 JP19860122792 申请日期 1986.05.28
申请人 TOKYO ELECTRON LTD 发明人 SUYAMA MASAFUMI
分类号 H01L21/22;H01L21/31;H01L21/316 主分类号 H01L21/22
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