| 摘要 |
<p>PURPOSE:To especially improve a radiation resisting characteristic by providing a circuit to execute two Ds, two D bars or mutual connecting and switching operations in accordance with the external control signal on the way of an information line composed of a pair of positive and complementary signal lines D and the D bars. CONSTITUTION:Between an information converting circuit 9 and an input output circuit 6, a bus 8' is provided and a positive signal line D' and a complementary signal line D' bar are obtained. By using four FETs Q1-Q4, an external control signal phi1 is given to a terminal T5 and a complementary external control signal phi1 bar is given to a terminal T6. When the phi1 is an 'H', Q1 and Q2 only are turned on, terminals T1 and T3 and T2 and T4 are connected and signal lines D and D' and complementary signal line D bar and D' bar are connected. When the phi1 is an 'L', Q3 and Q4 only are conducted, the D and D' bar and the D bar and D' are connected, a positive signal line and a complementary signal line are replaced and the information is inverted. The signal phi1 and the phi1 bar are changed over for a suitable period, and then, the memory information of respective cells in a cell array 1 can be inverted. By such constitution, a memory device to keep a long period circuit symmetry can be obtained.</p> |
