| 摘要 |
PURPOSE:To improve the uniformity of a film thickness and to decrease transmission loss by preliminarily forming an Si layer on a substrate by a plasma cracking method and oxidizing said layer to form an SiO2 layer. CONSTITUTION:The substrate 2 is imposed on a sample holder 3 in a sample chamber (vacuum chamber) 1 in which the pressure is regulated. The substrate is heated by a heater 4 to a low temp. of about <=500 deg.C, for example, about 300 deg.C. On the other hand, a gas introducing hole piece 5 is connected to a high- frequency source 7. A gas contg. Si such as, for example, SiH4 is introduced through a gas introducing port 6 and the hole piece 5 into the sample chamber 1 to form Si on the substrate 2 while plasma power is kept impressed by the source 7. The Si is thereafter oxidized, by which the SiO2 is formed. |
