| 摘要 |
PURPOSE:To form patterns with high accuracy on the surface of a substrate having irregularity on the surface, by forming a spin-on glass film on the surface having resist patterns and patterning an organic resin film with the glass film used as a mask. CONSTITUTION:A phenol resin film 22 is applied and prebaked on a semiconductor substrate 21 having steps on the surface. A resist 24 having high sensitivity is applied thereon. The resist 24 is exposed and developed to form resist patterns 24' with high accuracy. A spin-on glass film 23 is applied on the patterns 24' and prebaked to be solidified. The glass film 23 is etched under control so that the glass film 23 is left only in the spaces between the patterns 24'. The oxygen plasma etching is continued with the residual glass film patterns 23 used as a mask, so that the resin film 22 is patterned. In this manner, patterning can be performed with high accuracy on the surface of the substrate 21 having irregularity.
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