| 摘要 |
PURPOSE:To obtain a semiconductor light emitting device of the type for enclosing a lateral light by selectively diffusing Zn or Si in a multiplex quantum well made of a GaAs film and an AlGaAs film to be disordered. CONSTITUTION:A P<+> type GaAs buffer layer 2, a P-type AlGaAs clad layer 3, an MQW active layer 4 made of a GaAs film and an AlGaAs film, an N-type AlGaAs optical guide layer 5, an MQW guide layer 6 made of an N-type GaAs film and an N-type AlGaAs film, an N-type AlGaAs clad layer 7 and an N<+> type GaAs cap layer 8 are sequentially grown on a P<+> type GaAs substrate 1 by a molecular beam epitaxially growing method. The aluminum composition of the optical guide layer is grated to be gradually reduced toward a surface side, the clad layer formed thereon is composed of A GaAs, the aluminum composition is graded to be gradually reduced toward a surface side, and Zn or Si is thereafter selectively introduced so as to disorder the part except a current path in the optical guide layer. |
