| 摘要 |
<p>A bipolar transistor (10) has a barrier layer (24) interposed between its base (14) and its emitter (16). The barrier layer (24) is formed of a different, wider band gap, semiconducteur material than the base (14) and the emitter (16) and has the same conductivity type as the emitter (16). The barrier layer (24) exhibits a large difference in the effective electron mass and the effective whole mass, and presents a small barrier to majority carriers. The tunneling emitter bipolar transistor (10) exhibits a comparable current gain while having better temperature stability, less light sensitivity, and a much lower emitter resistance (leading to a much higher cut-off frequency) than conventional heterojunction bipolar transistors.</p> |
