发明名称 |
Matrix sensor |
摘要 |
Matrix sensor (Figure 1) with sensor elements (2), in immediate local vicinity of which the electronic amplifier circuit (30) allocated to the individual sensor element (2) is arranged, this amplifier circuit (30) being implemented in an amorphous semiconductor layer (3, 13) located on the membrane (5) of the matrix sensor. <IMAGE>
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申请公布号 |
DE3617910(A1) |
申请公布日期 |
1987.12.03 |
申请号 |
DE19863617910 |
申请日期 |
1986.05.28 |
申请人 |
SIEMENS AG |
发明人 |
KLEINSCHMIDT,PETER,DIPL.-PHYS.;MADER,GERHARD,DR. |
分类号 |
H01L27/16;H04N3/15;(IPC1-7):H01L27/16;H04N1/028;H04N5/335 |
主分类号 |
H01L27/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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