| 摘要 |
In the invention, an integrated circuit of transistors has among the transistors a p-type insulator diffusion (2), of which mid-portion having a n-type high-conncentration diffusion (3) in parallel with imbedded layers (11), (12). The diffusions are grounded at respective ends. The diffusion (3) performs the collector role of a n-p-n transistor in substitution of Q1's collector (13) to prevent the influence on Q1 by a drop of pottential to below -0.7V at the collector of Q2.
|
