| 摘要 |
PURPOSE:To make an oxidation state of W in a thin film artificially controllable, by intruducing oxidizing gas such as oxygen gas, water vapor or the like well controlled at the time of sticking of the thin film, or steam. CONSTITUTION:Making Sc2O3 a supply source, a thin film 8 consisting of W and Sc2O3 is stucked to a cathode by means of a vacuum sputtering process. In advance of this vacuum sputtering, high purity oxygen is introduced through a gas introducer so as to cause oxygen partial pressure in a spatter evaporation vessel to become 1X10<-5>-1X10<-4> Torr, and the partial pressure is measured by a small-sized mass spectrograph installed in the vessel. With this operation, W in the thin film 8 is oxidizable. With this constition, an oxidation state of this W can be artificially controlled. |
