| 摘要 |
PURPOSE:To obtain a high IC memory which works on the binary voltage with a small area and with reduction of the read signal level in case a memory cell is microminiaturized, by providing a function into a memory cell to amplify a store signal. CONSTITUTION:This memory cell contains the 1st n type MOSFET having electrodes 11-14, the 2nd p type MOSFET having electrodes 15-18, the 3rd n type junction MOSFET having electrodes 19-22, a capacity 23, address lines 24 and 25, a digit line 26, and a power supply terminal 27. Then the line 26 is connected to a sense amplifier in a read mode, and the line 24 is set at 3V while the line 26 is kept at ''0''V. In this case, the line 25 is set at 3V and connected to lines 26 and 24. When the memory cell stores ''1'', the electrode 19 is set at about -1.5V. Thus the 3rd MOSFET becomes nonconductive and the line 26 keeps ''0''V. While the elec trode 19 is set at about ''0''V while the cell stores ''0''. Then the 3rd MOSFET conducts and the line 26 is set at about 1V. Therefore ''0'' and ''1'' can be read out. |
