| 摘要 |
PURPOSE:To alter the pulse width of laser pulses, and to manufacture a pulse gas laser device as a light-source or the like for a semiconductor process by forming at least one of each node between an electrode for a peaking capacitor and an approach plate in structure, in which the node can be slid, keeping electrical conduction, and sliding the node. CONSTITUTION:Two peaking capacitors 3 are fitted, these peaking capacitors are fastened to a mounting plate 9, and a rotary gear 10 set up to the mounting plate 9 and engaged with a fixed gear 11 is turned by a motor or the like, thus sliding the peaking capacitors 3 left and right while sliding one electrodes for respective peaking capacitor 3 and the other electrodes left and right as one electrodes for the peaking capacitors are brought into contact with each grounding approach plate 5 and the other electrodes with one high-voltage approach plate 4 respectively. The rotary gear 10 is revolved, thus continuously varying sectional areas surrounded by two closed circuits shaped by the two peaking capacitors 3, a discharge electrode pair 2, the high voltage approach plate 4 and the two grounding approach plates 5 for a main discharge circuit, then continuously changing the inductance of the main discharge circuit 20. |
