| 摘要 |
PURPOSE:To prevent the permeation of a constituent element having high vapor pressure as a compound semiconductor, and to inhibit the dissociation of the element by thermally treating a metallic silicide film containing nitrogen as a heat treatment protective film. CONSTITUTION:An ion implantation layer 12 is formed selectively into a GaAs substrate 11. A metallic silicide film 13 is used as a protective film at the time of activation heat treatment after ion implantation, a material, such as tungsten silicide, molybdenum-silicide, tungsten-molybdenum-silicide, etc. is employed, and the film 13 is shaped through the so-called reactive sputtering method, etc. in which nitrogen gas is caused to flow into a sputtering atmosphere in order to contain nitrogen. The content of nitrogen is 1-50%. Film thickness is approximately 0.01-1mum. The surface of the metallic silicide film 13 may also be coated with an insulating film 14, such as SiO2, SiO3N4, etc. Ga is not detected in the metallic silicide film 13 after heat treatment, thus inhibiting dissociation from the GaAs substrate 11 of As.
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