| 摘要 |
PURPOSE:To reduce interface level density and electron-capture level density largely by etching the surface of an indium phosphide substrate by hydrochloric acid gas in a reaction vessel filled with phosphine gas and depositing an silicon dioxide film on the surface of the indium phosphide substrate, using silane gas and oxygen gas as raw materials. CONSTITUTION:In the manufacture of a device such as an MISFET, an active layer having carrier concentration of 2X10<17>cm<-3> is formed on the surface of an N-type InP substrate (n=1X10<16>cm<-3>), and thc InP substrate is installed into a reaction vessel. The reaction vessel is supplied continuously with phosphine (PH3) gas, and HCl gas is fed for five min in a PH3 gas atmosphere, thus etching the surface of the InP substrate. The feeding of HCl gas is stopped, the reaction vessel is supplied with SiH4 gas and O2 gas in the PH3 gas atmosphere, and a phosphorus-doped SiO2 film having film thickness of 1000Angstrom is deposited on the surface of the InP substrate. The InP substrate is extracted from the reaction vessel, and a gate electrode, etc.,are shaped, thus completing the MISFET.
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