| 摘要 |
PURPOSE:To form a WSi2 film having low resistance by depositing W under the state in which a substrate, the surface of which has an Si layer, is heated at a temperature of 850 deg.C or more and generating a silicification reaction at the same time as the deposition of a film. CONSTITUTION:In a process in which a film such as a WSi2 film 3 is formed onto a substrate such as a single crystal Si substrate 1 having a P-type (100) face orientation, normal acid cleaning is conducted, and the single crystal Si substrate 1 having the P-type (100) face orientation brought to a clean surface through diluted hydrofluoric acid treatment is heated at an arbitrary temperature to 950 deg.C from 850 deg.C in an evaporation device, thus evaporating W on the P-type Si substrate. W corresponding to film thickness of 400Angstrom is evaporated, thus shaping the WSi2 film 3 having film thickness of approximately 1000 deg.C and resistivity of 40mupi.cm at the same time as evaporation. When other conditions are equalized, W corresponding to film thickness of 800Angstrom is evaporated and the WSi2 film 3 having film thickness of approximate]y 2000Angstrom is shaped, the resistivity of the film 3 is further lowered up to-27mupi.cm.
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