| 摘要 |
<p>An interconnection pattern made of aluminum alloy, such as Al-Cu, on a semiconductor IC is dry etched in an etching gas. When an etching gas containing chlorine is used, residual chlorine on the substrate is difficult to remove, and causes corrosion of the patterned aluminum alloy layer. According to the present invention, the photo resist stripping process following the etching process is carried out by a downstream stripping process using a conventional etching gas, such as CF4 + O2, at room temperature, and, before the resist-stripped substrate is exposed to the atmosphere, the substrate is heated in a vacuum at higher than 100 DEG C, thus the residual chlorine component is removed. The heating process can be carried out concurrently during the resist stripping process. By this means corrosion of the aluminum alloy interconnection is prevented.</p> |
