Semiconductor image sensor and a method for fabricating same.

摘要

A plurality of light detection cells (19) are formed on a substrate (1) together with a charge-coupled device (CCD) connected to the detector cells for transferring and outputting electrical signal charges produced in the light detector cells. A first insulation layer (2) is formed on the substrate for isolating a patterned wiring (16-1, 16-2, 16'-1, 16'-2) of a peripheral portion of the CCD from the substrate and a second insulation layer (3) is formed on the substrate for isolating adjacent light detection cells from one another. The first insulation layer (2) has a thickness selected to withstand the voltage applied to the CCD portion whereas the second insulation layer (3) has a smaller thickness adapted to withstand a lower voltage applied to the picture cells. The narrower field isolation between picture cells allows a greater integration density of the picture cells.