发明名称 SCHOTTKY BARRIER DIODE QUAD
摘要 PURPOSE:To use adjacent terminals of four terminals as pairs on incorporation into a circuit, and to facilitate soldering and the like by forming a wiring electrode connecting other two element regions onto a high molecular group resin between a Schottky electrode and an ohmic electrode in one element region. CONSTITUTION:There are isolation grooves 10 shaped so as to part an N<++> type impurity 3 up to a section under the impurity 3 from the surface of a substrate 1 in order to partition element regions 11a, 11b, 11c, 11d, and the side surfaces of the grooves 10 are made perpendicular to the surface of the substrate 1. A high molecular group resin 12 such as polyimide formed as an insulating film on the upper surface of the substrate 1 is also introduced into the isolation grooves 10..., thus ensuring element isolation by the isolation grooves 10.... A wiring electrode 7a connecting an ohmic electrode 6 in a region 11c and a Schottky electrode 5 in an element region 11a is shaped onto the high molecular group resin 12 between a Schottky electrode 5 in an element region 11d and an ohmic electrode 6, thus connecting four diodes in a crossed manner.
申请公布号 JPS62277765(A) 申请公布日期 1987.12.02
申请号 JP19860120861 申请日期 1986.05.26
申请人 SANYO ELECTRIC CO LTD 发明人 HONMA KAZUYA
分类号 H01L29/872;H01L29/47 主分类号 H01L29/872
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