| 发明名称 |
High purity high surface area alpha crystalline silicon nitride |
| 摘要 |
High purity silicon nitride particles are disclosed which are essentially alpha crystalline and which have a surface area of greater than about 25 m2/g.
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| 申请公布号 |
US4710368(A) |
申请公布日期 |
1987.12.01 |
| 申请号 |
US19860864614 |
申请日期 |
1986.05.19 |
| 申请人 |
GTE PRODUCTS CORPORATION |
发明人 |
RITSKO, JOSEPH E.;ACLA, HOWARD L. |
| 分类号 |
C01B21/068;(IPC1-7):C01B21/068;C01B33/06 |
主分类号 |
C01B21/068 |
| 代理机构 |
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| 主权项 |
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