发明名称 |
MEMORIA SEMICONDUCTORA CON LINEA DE PALABRAS REFORZADAS. |
摘要 |
<p>A dynamic random access memory has a row conductor boosted in excess of the power supply level during an initial portion of a memory cycle. The voltage is then clamped at the supply level during the middle portion of the cycle, and optionally boosted again during the refresh portion. This allows improved performance and reliability, especially in memories employing bit lines precharged to one-half the power supply level.</p> |
申请公布号 |
ES551775(D0) |
申请公布日期 |
1987.12.01 |
申请号 |
ES19750005517 |
申请日期 |
1986.02.08 |
申请人 |
AMERICAN TELEPHONE + TELEGRAPH COMPANY |
发明人 |
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分类号 |
G11C11/407;G11C8/08;G11C11/408;(IPC1-7):G11C11/34;H03K19/00 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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