| 摘要 |
PURPOSE:To improve reliability of a circuit by equipping MESFET and junction FET (JFET) in combination on a substrate of semiconductor. CONSTITUTION:As shown in Fig., MESFETQM is installed at right side and JFETQJ at left side. MESFET 13 and JFET 14 are so jointly installed on a substrate 1 of an identical GaAs semiconductor in such a manner that a circuit element is formed at MESFET, if much importance is attached to high speed of electrical characteristic rather than its stability, while on the contrary the circuit element is formed at JFET, if much importance is attached to stability of electrical characteristic rather than its high speed. Thus, reliability is improved by composing the circuit elements in combination.
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