| 摘要 |
A semiconductor memory device includes: a semiconductor memory which is driven in response to a power source voltage supplied between a power source pad and a ground pad; and a peripheral circuit for executing the readout of data from and the writing of the same in this semiconductor memory. The power source pad is divided into a main power source pad and a back-up power source pad. The peripheral circuit is made operative by a voltage applied between the main power source pad and ground pad. The semiconductor memory is made operative by a main power source voltage which is applied to the main power source pad and is supplied through a first diode, or by a back-up power source voltage which is applied to the back-up power source pad and is supplied through a second diode.
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