| 摘要 |
PURPOSE:To attain speeding up of manufacturing a semiconductor element by forming channel regions which is achieved by utilizing a groove prepared in a mask material to perform an ion implantation and a gate electrode which is obtained by making a gate electrode material adherent to all the surface of substrate through the mask material. CONSTITUTION:A mask material 16 is adhered over a gate insulating film 13 of a semiconductor substrate 11 where the gate insulating film 13, source/ drain regions 15 as well as shallow source drain regions 14 are formed. And then, a groove part 16a is formed at the mask material and a channel region 17 is formed by performing ion implantations through the groove part 16a. A material of gate electrode 18 is adhered to all the surface of substrate through the maks material 16 where the groove part 16a is formed and furthermore, the gate electrode 18 is formed at an upper position of the channel region after reducing the mask material 16 according to a lift-off system. Thus, this approach helps inhibit fully parastic capacitances CGS and CGD having between gate source and gate drain and attain speeding up of manufacturing a semiconductor element.
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