MOS transistor,申请号US19840627470-传众专利搜索

发明名称	MOS transistor
摘要	A gate electrode (4') of a MOS transistor is formed in a depression (16) provided in a substrate (1). Source and drain regions (6 and 7) of the MOS transistor are formed in the substrate (1) to be opposed to each other with the gate electrode (4') being located therebetween.
申请公布号	US4710790(A)	申请公布日期	1987.12.01
申请号	US19840627470	申请日期	1984.07.03
申请人	MITSUBISHI DENKI KABUSHIKI KAISHA	发明人	OKAMOTO, TATSUO;EGUCHI, KOUJI;OOSAKI, SABUROU
分类号	H01L21/336;H01L29/41;H01L29/423;H01L29/78;(IPC1-7):H01L29/78	主分类号	H01L21/336
代理机构		代理人
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