| 摘要 |
PURPOSE:To enhance electrical characteristics of solar cell element by using silicon carbide hydride (fluorination) thin film, in which amorphous and crystallite phases are mixed as a p-type semiconductor thin film of an optical incidence side. CONSTITUTION:Hydride (fluorination) p-type SiC (p-type muc-SiC: H (:F)), in which crystallite and amorphous phases are mixed at least as window layers of pin-types solar cells is used. Accordingly, conductivity can be improved by maintaining a wideband gap to inhibit a power loss due to a series of resistance components in a solar cell element, thereby utilizing effectively incident lights at i layer 3 where a further active layer is obtained. The use of p-type SiC enables a thin film solar cell element to have the high collecting efficiency of lights. |
