| 摘要 |
PURPOSE:To perform a highly accurate check for mask matching between an ion implantation system transfer path and a 'Permalloy(R)' system transfer path at a junction part, by etching a part of the former transfer path by phosphoric acid. CONSTITUTION:An ion implantation system transfer path I is formed on the surface of a bubble magnetic film LPE and covered with a resist excluding parts to be etched. Then phosphoric acid treatment is applied for selective etching of an ion implantation area ION. These parts subjected to the phosphoric acid etching treatment can be selected for every 16 or 32 loops in the array direction of minor loops (m). Thus the pattern form of the area ION can be viewed via a microscope since the area ION subjected to the phosphoric acid etching treatment. As a result, both pattern forms of the path I and a 'Permalloy(R)' system transfer path P can be visually recognized. Thus it is possible to check easily the mask matching variance between both paths I and P at a junction part when they are formed.
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