| 摘要 |
PURPOSE:To provide a high quality single crystal having high and nearly uniform specific resistance by using molten indium phosphide doped with Fe, selecting the orientation of a face to be grown and pulling up a crystal in a magnetic field. CONSTITUTION:Molten indium phosphide doped with Fe is used, <100> orientation is selected for a face to be grown and a crystal is pulled up by LEC method in a magnetic field. At this time, high purity indium phosphide having <=5X10<16>cm<-3> concn. of carrier is preferably used as the indium phosphide, the preferred concn. of Fe in the melt in the early stage is about 0.01-0.07wt% and the preferred intensity of the magnetic field is >=800 Oe. The resulting indium phosphide single crystal has >=1X10<6>OMEGA.cm specific resistance and <=10% standard deviation of specific resistance in a cross-section perpendicular to the growth direction. When the single crystal is used, wafers having high and uniform specific resistance can be easily obtd.
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