| 摘要 |
PURPOSE:To attain a reading action with a Block line memory element allowing to correspond a pair of Block lines with the 1-bit information, by providing an intra-plane magnetic field application means in the vicinity of the end part of a stripe magnetic domain. CONSTITUTION:A pair 4 of Block lines are provided at the end part of a stripe magnetic domain 2 and a current IC1 is conducted to a conductor 10 to produce an intensive intra-plane magnetic field HC in the inverse of Y axis direction. Thus the space between both Block lines 4-1 and 4-2 is increased. The line 4-1 is moved up to the outside of the conductor 10 by a magnetic field produced by the conductor 10. While the other line 4-2 is set stably at the end part of the domain 2. Then a prescribed current is supplied to a conductor 7 and the domain 2 is easily cut to produce a new magnetic domain 8. This segmented domain 8 is detected by the same method as a normal bubble memory technology and the pair of Block lines can be read out as the digital information.
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