| 摘要 |
PURPOSE:To ensure high-reliability operations even in submicron-rule regions by a method wherein all the sources and drains are composed of the same metal or the same metal/silicon compound and 0.4-0.7eV-high Schottky barriers are built of a metal and semiconductor or of a metal/silicon compound and semiconductor. CONSTITUTION:An oxide film 3 and N-type well 2 are formed on a silicon substrate 1 and, after the formation of a gate oxide film 4 and polycrystalline silicon film 5, a nitride film 9 is deposited. The three layers are selectively retain after a photoetching process, a gate electrode is built, the silicon substrate 1 is subjected to etching with the nitride film 9 on the gate electrode 5 and an isolating region film 3 on the silicon substrate 1 serving as mask, and then tungsten is deposited only on the silicon substrate 1. After the removal of the nitride film 9 from upon the gate electrode 5, a thermal oxide film 10 is formed and, after the deposition of a phosphosilicate glass film 7, a contact hole is provided and an aluminum electrode 8 is built. Though a source and drain are built of tungsten in this design, any will do as far as the height against electrons of a Schottky barrier is as high as 0.4-0.7eV. |
