| 摘要 |
PURPOSE:To grow a film having uniform thickness without damaging a wafer by vertically providing many wafers in the longitudinal direction of a furnace core tube, and gradually increasing the interval between the wafers from a gas inlet toward a gas outlet. CONSTITUTION:Plural wafers 3 are placed on a wafer boat 4a in the furnace core tube 2 provided with a heater 1 of the vapor growth device, and arranged along the longitudinal direction of the furnace core tube 2 in the direction vertical to the flow 6 of the gas introduced into the tube. The intervals X1-Xn between the wafers 3 are increased from the gas inlet 5 toward the gas outlet 7 as the distance from the inlet is increased, and the intervals are set to satisfy X1<X2<...<Xn. Consequently, although the gas concn. decreases as the gas successively reacts from the gas inlet 5, the access of the gas to the wafer 3 on the gas outlet 7 side is facilitated, and hence uniform films without any difference in thickness between the wafers 3 are grown without changing the temp. distribution in the furnace.
|
