| 摘要 |
PURPOSE:To obtain the MOS transistor of LDD structure having no junction leak current and excellent controllability over the film thickness of a gate side part by a method wherein a CVD nitride film is grown on a thermally oxidized film, the nitride film is left on a gate side part by performing an anisotropic dry etching, the thermally oxided film is removed by performing a wet etching, and a source and a drain are formed. CONSTITUTION:A gate oxide film and a polycrystalline silicon gate 3 are formed on the surface of a silicon substrate 1, and a thermally oxided film (silicon oxide film) 4 is formed by performing a thermal oxidizing method. Then, a CVD nitride film 5 is grown on the thermally oxidized film 4, an anisotropic dry etching is performed on the film 4, and the dry etching is stopped before the film 4 is completely etched. At this time, the nitride film 5 can be left on the gate side part only. Then, a wet etching is performed on the thermally oxidized film 4, and the thermally oxidized film on the silicon substrate is removed. Subsequently, silicon is thermally oxidized, and a source 7 and a drain 8 are formed by ion-implanting impurities of the opposite conductivity type.
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