发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent the breakdown of an interconnection electrode at the step part of an insulating film, by providing an interconnection layer, whose cross section has the gentle inclination of an edge with respect to the inclination of the edge of the insulating film at a contact hole part. CONSTITUTION:A conductor layer is formed on the entire surface of a substrate 1, in which a contact hole 5 is formed. Thereafter, said conductor layer undergoes etch back by an anisotropic etching method. Since the etching advances only in the vertical direction, the conductor layer remains at the side wall of the contact hole 5. Thus, the cross section having a gentle tapered shape is formed. Under this state, an interconnection layer 6 is formed. Even if the thickness of the interconnection layer 6 becomes thin at the side surface of the contact hole 5, the part is covered by said conductor layer. Thus the step coverage is improved. Therefore, the breakdown at the step part becomes almost negligible.
申请公布号 JPS62274640(A) 申请公布日期 1987.11.28
申请号 JP19860118232 申请日期 1986.05.22
申请人 FUJI XEROX CO LTD 发明人 KISHIYAMA TAKEKI;YOKOYAMA AKIHIRO;TEZUKA HIROAKI
分类号 H01L23/522;H01L21/768 主分类号 H01L23/522
代理机构 代理人
主权项
地址