| 摘要 |
PURPOSE:To assure the high amplification factor by a method wherein an enhancement type short channel region is formed in a region in contact with a source region below a gate by horizontal diffusion of impurity performed from the source region side before the foramation of source region. CONSTITUTION:A semiconductor substrate formed of an n<+> enhancement type channel region 16 in higher concentration than that of an n<-> type well 1 to be supplied with specified threshold value, a p'' type depletion layer 14 in the lowest concentration and a p<-> offset region 6 in higher concentration than that of said region 14 successively in contact with one another as well as a gate electrode 5 above said regions 16 and 14 are formed into one body between a p<+> type source region 7 and a p<+> type drain region 8 from the source region 7 to the drain region 8. In such a constitution, the channel elength Lch of the enhancement type channel region 16 filling the role of a channel is specified so that short channel in submicron order may be formed with high precision without any dispersion at all.
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