| 摘要 |
<p>PURPOSE:To prevent deterioration of chracteristics due to incompleteness of a passivation film and to improve the yield rate and reliability of an element, by uniformly forming the passivation film for the exposed part made by mesa etching on the entire surface. CONSTITUTION:A mask layer 5a is formed on the surface of the mesa forming region of a semiconductor crystal layer 3 on a substrate 1, at which a P-N junction 4 is formed. Mesa etching is performed. At this time, e.g., the mask layer 5 is formed with the double layers of an SiO2 film and an Si3N4 film. Then, the eaves of the mask layer 5a haying an appropriate width are usually formed at the peripheral part of the upper part of the mesa structure. The eaves are made to remain. After the mesa etching, passivation glass is attached to a part exposed by the mesa etching. Then, with the side of the mesa structure of the substrate facing downward, the passivation glass 9 is burned. The fused glass is blocked by the eaves and do not go up to the mask layer 5a. A passivation film 10 is uniformly formed on the entire surface of th an exposed part 8. The perfect protected state of the exposed part 8 caused by the mesa etching is obtained.</p> |
