摘要 |
PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from a p-type semiconductor contg. an amorphous silicon contg. hydrogen atom as a main component, and also contg. boron atom as an impurity, and by constituting an intermediate layer from a dried curing material of a solution contg. at least one kind of an org. zirconium compd. CONSTITUTION:The intermediate layer is laminated on a conductive substrate, and the photoconductive layer composed of the amorphous silicon is coated on the intermediate layer. The dried curing material of the solution contg. at least one kind of the org. zirconium compd. is used as the intermediate layer. The p-type semiconductor comprising the amorphous silicon contg. hydrogen atom as the main component, and also contg. boron atom and at least one kind of carbon atom, nitrogen atom or oxygen atom as an impurity is used as the photoconductive layer. The further preferable org. zirconium compd. is a zirconium complex and a zirconium alkoxide. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality. |