| 摘要 |
PURPOSE:To improve the display quality of the titled panel by forming a prescribed metallic shading film by means of an electroless plating, after forming a passivation film for a-Si FET array. CONSTITUTION:The passivation film composed of SiOx film 3 is formed on a-Si FET array 2 mounted on a glass substrate 1 by means of CVD method. Sn-Pd is absorbed on the surface of the obtd. substrate. Subsequently, the obtd. substrate is dipped in the solution of a metal plating accelerator contg. fluoroboric acid. NaOH and KOH, etc., and the photoresist 5 is coated on the obtd. substrate, then unnecessary part is masked by photolithography. And then the obtd. substrate is dipped in the Ni-base alloy plating solution, and the plating is effected on only a channel part of FET, thereby obtaining the shading film 4. After removing the photoresist 5 by using acetone, the SiOx film 3 mounted on the terminal part of the FET array is etched by using hydrofluoric acid. Thus, as the shading film has an uniform thickness, even in a step structure part of the substrate, the titled panel having an excellent shading property and good display quality is obtd. |
