| 摘要 |
PURPOSE:To make it possible to obtain high gain by using the quantum well effect of a semiconductor laser and to improve problem areas cuased in the implementation of a thin line structure, by forming one or several layers of semiconductor layers on a an active layer and a semiconductor layer having a large forbidden band. CONSTITUTION:A clad layer 12, a guide layer 11 and a gallium arsenide atom layer, which is the composition of an active layer, are grown to a film thickness 18. Thereafter, a barrier structure 14 is formed. The same material as that of the guide layer 11 is grown to a film thickness 19. Then the guide layer 11 and a clad layer 13 are grown. Thereafter, a cap layer 15 is grown in order to provide contact with electrodes as usual, and electrodes 16 and 17 are provided. Both ends of the active layers are formed with cleaved end surfaces 2 and 3 as usual. |
