| 摘要 |
PURPOSE:To obtain the titled body having a very small dark attenuation of the electrostatic charge potential by constituting a photoconductive layer from a p-type semiconductor which comprises an amorphous silicon contg. hydrogen atom as a main component, and also contg. boron atom as the impurity and by constituting a surface layer from a dried curing material of a solution contg. at least one kind of an org. titanium compd. CONSTITUTION:The photoconductive layer composed of the amorphous silicon is coated on the conductive substrate. The surface layer is laminated on the photoconductive layer. The dried curing material of the solution contg. at least one kind of the org. titanium compd. is used as the surface layer. The p-type semiconductor which contains the amorphous silicon as the main component, and also contains boron atom and at least one kind of the atom selected from carbon atom, nitrogen atom and oxygen atom as an impurity is used as the photoconductive layer. The org. titanium compd. is further preferably exemplified by a titanium complex and a titanium alkoxide. The preferable example of the titanium compd. is diisopropoxytitanium bis(acetyl acetonate) etc. Thus, the high mechanical strength, the high durability, the high heat-resisting property and the high photosensitivity of the titled body are maintained, and the high electric charge holding power of the titled body is obtd., without being affected by the surroundings of an outside and the number of using, thereby obtaining the picture image having excellent quality. |
