| 摘要 |
PURPOSE:To manufacture a mask for a lithography having accurately fine pattern of a heavy metal film made of tantalum without influence of rear scattering by forming the film of a heavy metal such as tantalum on a membrane made, for example, of a boron nitride, forming a resist film on the metal film, and emitting a metal ion beam to the resist film to draw a pattern, CONSTITUTION:A film 2 of a heavy metal, such as tantalum is formed on a membrane 1 made, for example, of a boron nitride, a resist film 3 is formed on the film 2, and a metal ion beam, such as a gallium ion beam or a silicon ion beam is emitted to the film 3 to draw a pattern. Since the ions of the gallium or silicon are much larger in mass than electrons, its entering distance to the resist film is short, the quantity of reflected ions is accordingly less to resultantly alleviate the influence of rear scattering of a large problem in case of heavy metal, such as tantalum, thereby accurately photosensing only a desired region. |
