| 摘要 |
PURPOSE:To form a high speed operation transistor and a transistor adapted for a power source on the same semiconductor chip by a relatively simple process by forming a semiconductor region to become a diffused resistor connected with a leading electrode on the same semiconductor region as a region formed with a base region and an emitter region. CONSTITUTION:A conductive layer to become a base leading electrode 7 is contacted with a base region 6 formed on the main surface of a semicondnctor substrate 1, and a semiconductor region 10 to become a diffused resistor connected with a base leading electrode 7 is formed on the same region as a semiconductor region 5 formed with a base region 6 and an emitter region 9. For example, a P-type semiconductor region 10 to become a diffused resistor is formed on the island of the same region as the N<-> type region 5 formed with base and emitter regions 6a, 6b, 9, and one end of the region 10 is connected with the polysilicon layer 7 as a base leading electrode through an aluminum electrode 11a. An aluminum electrode 11b formed to contact with the other end of the region 10 is used substantially as a base terminal.
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