| 摘要 |
PURPOSE:To improve the withstanding voltage of a GaAs semiconductor device having a Schottky electrode of MESFET, etc. by forming the Schottky electrode formed on a GaAs substrate of W-Si alloy of a composition in a specific range of atomic ratio of Si/W. CONSTITUTION:A Schottky electrode 5 formed on a gallium arsenide semiconductor substrate 1 is formed of a tungsten silicon alloy within a range of 0.1-0.6 of atomic ratio (Si/W). For example, an N-type region in which Si<+> of impurity ions is diffused in a semi-insulating GaAs substrate 1 and N<+> type regions at both sides of the N-type region so that the N-type region forms the channel 2 of MESFET and the N<+> type regions disposed at both sides of the N-type region form a source 3 and a drain 4. A gate electrode 5 made of the W-Si alloy is covered on the substrate of N-type region in the channel 2 to form a Schottky diode. |
