发明名称 ION SOURCE FOR ION IMPLANTING APPARATUS
摘要 PURPOSE:To make it possible to accurately change the filament position according to kinds of ion seeds by providing a space between an insulator and the filament through-hole of a plasma generating chamber, thereby making the filament capable of ralatively moving in the fore and aft directions. CONSTITUTION:Both ends of a filament 7 are inserted into a filament insert 17 to be supported. The insert 17 is fixed to an insulator by a clip 18. Thus, a space 21 is formed between the insulator 8 and the hole of a plasma generating chamber 6. By the movement of the filament electrode 9 in the fore and aft directions, the filament 7 combined to the electrode 9 can be moved as far as the distance of the space 21 in the fore and aft directions. Therefore, it is possible to accurately change the position of the filament in the chamber 6 according to kinds of ion seeds.
申请公布号 JPS62272440(A) 申请公布日期 1987.11.26
申请号 JP19860114805 申请日期 1986.05.21
申请人 MITSUBISHI ELECTRIC CORP 发明人 MATSUMURA YASUSHI
分类号 H01J27/08;H01J37/08 主分类号 H01J27/08
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