发明名称 VAPOR GROWTH METHOD AND APPARATUS
摘要 PURPOSE:To continue a vapor growth for a long period without depositing a reactive substance to be deposited on the tubular wall of a reaction tube during a growing reaction by feeding gas containing constituent element of the substance only through the center of the tube and feeding nonreactive gas to a regions along upper and lower tubular walls. CONSTITUTION:A material supply port 11 is so provided at the central region of a reaction tube 1 as to feed gas containing constituent element of a substance to be deposited in a laminar state only to the central region of the tube 1. A high temperature gas supply port 12 is so provided at the top of the tube 1 as to feed nonreactive gas, such as high temperature hydrogen gas along the upper layer of the tube 1. A low temperature gas supply port 13 is so provided at the bottom of the tube 1 as to feed nonreactive gas, such as low temperature hydrogen gas along the lower layer of the tubular wall of the tube 1. In an optical vapor growing apparatus of this structure, the nonreactive gas flows along the upper and lower tubular walls, the gas containing the constituent of the substance flows only at the central region where a substrate 5 exists and does not contact the tubular wall. Thus, no material is deposited on the tubular wall.
申请公布号 JPS62272524(A) 申请公布日期 1987.11.26
申请号 JP19860116407 申请日期 1986.05.20
申请人 FUJITSU LTD 发明人 MARUYAMA KENJI
分类号 H01L21/205;H01L21/263 主分类号 H01L21/205
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