| 摘要 |
A nickel based material for a semiconductor apparatus is provided which includes between 0.5 and 5% of at least one material selected from the group consisting of cobalt, iron, aluminum, manganese, silicon, carbon, and copper; residual nickel; and unavoidable impurties. With this nickel based material, electrical conductivity thereof can be maintained within a proper value and the plate film adhesion in silver plating nickel based products can be improved remarkably and both heat dissipation capacity and the coefficient of thermal expansion can be improved. |
