发明名称 HEAT TREATING APPARATUS
摘要 PURPOSE:To effectively prevent a treating space from being contaminated by covering the upper end of a soaking tube provided around a reaction tube with a cover to prevent the invasion of foreign material atoms from upward direction with respect to the reaction tube. CONSTITUTION:A treating space 3 holds a plurality of wafers 6 to be treated by a jig 7 at a predetermined interval parallel to the sectional direction of a reaction tube 2. The jig 7 is composed integrally with a sealing cover 8 attached to the lower end of the opening of the tube 2, and the wafers 6 are conveyed in or out of the space 3 through the lower end of the opening. A soaking tube 9 made of silicon carbide (SiC) is so coaxially attached with the tube 2 as to cover the outer periphery in the outer direction of the tube 2. Here, a domelike cover 9a made of silicon carbide is so fixedly attached to the tube 9 by bonding means such as welding as to cover the space surrounded by the tube 9 at the upper end of the tube 9. That is, the tube 2 is formed in a structure that the outer surface except the lower end of the opening of the tube 2 is all covered with the tube 9.
申请公布号 JPS62272525(A) 申请公布日期 1987.11.26
申请号 JP19860114581 申请日期 1986.05.21
申请人 HITACHI LTD 发明人 TAKAGAKI TETSUYA;NISHIZUKA HIROSHI;UCHINO TOSHIYUKI
分类号 H01L21/205;H01L21/22;H01L21/31 主分类号 H01L21/205
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