| 摘要 |
PURPOSE:To obtain a film carrier for a semiconductor device which is improved in the reliability while reducing its manufacturing cost by forming at least one layer of a bump by plating on the end parts of leads. CONSTITUTION:A conductor film of a desired pattern is bonded onto a flexible insulating film 2, and at least one layer of a bump 7 is formed by plating on the end part 6 of the leads 5 of a film carrier 2 for a semiconductor device formed with the leads 5. For example, the bump 7 is formed by plating on a part of an electrode 10 to be bonded, formed on an IC chip 9 of the inner leads 6. The bump metal employs, for example, a metal having soft and high ductility and corrosion resistance such as Au, Au alloy, Cu, Cu alloy, Sn, Pb-Sn, etc. The bump 7 is not limited to a metal plating of single layer, may be formed of metal plating of multilayers, or formed of a Cu-plated layer 71 for forming the base of the bump and an Au-plated layer 8 for enclosing the layer 71.
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