| 摘要 |
PURPOSE:To prevent a disc from being heated accompanying high-capacity and long-hour ion implantation so that wafer temperature does not rise in excess, by installing a shaft which communicates with a pedestal having a hollow part and the hollow part and which has holes for introducing and exhausting cooling substance. CONSTITUTION:Target structure 1 is composed of a target disc 11, a support 12, and a silicon rubber sheet 13 inserted between them, and then wafers 2 for ion implantation are mounted on a one-sided surface of the disc 11. A pedestal 12-2 and a shaft 12-4 in a support 12 are unified to form a hole 12-5, through which hollow parts 12-3 in both the pedestal 12-2 and the shaft 12-4 communicate with each other. Besides, heat transport means 11-2 are disposed inside a disc 11-1 so that eight of them are placed in accordance with the positions of the wafer 2 and becoming radial to a rotational center O-O'. And, cooling substance is introduced and exhausted through the hole 12-5 to prevent the structure 1 to be heated accompanying high-capacity and long-hour ion implantation.
|
