| 摘要 |
<p>A process for producing a single crystalline semiconductor island on an insulator, comprising the steps of providing a semiconductor island comprising a nonmonocrystalline semiconductor on an insulator; forming an energy-absorbing cap layer which coats at least the upper and side surfaces of the semiconductor island; irradiating the energy-absorbing cap layer with an energy beam; and melting and transforming the coated nonmonocrystalline semiconductor into a single crystalline semiconductor with the heat generated in the energy-absorbing cap layer.</p> |
